ds30761 rev. 6 - 2 1 of 6 www.diodes.com DCX100NS ? diodes incorporated DCX100NS 100ma dual pre-biased transistors general descriptions ? DCX100NS is best suited for applications where the load needs to be turned on and off us ing control circuits like micro-controllers, comparators etc. particularly at a point of load. it features a discrete pnp pass transistor which can support continuous maximum current up to 100 ma. it also contains an npn transis tor which can be used as a control switch and can also be biased using higher supply. the component devices can be used as part of a circuit or as stand alone discrete devices. features ? built in biasing resistors ? epitaxial planar die construction ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? ideally suited for automated assembly processes mechanical data ? case: sot-563 ? case material: molded plastic. "green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish - matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 5 ? ordering information: see page 5 ? weight: 0.0035 grams (approximate) reference device type r1 (nom) r2 (nom) r3, r4 (nom) q1 pnp 1k 10k ? q2 npn ? ? 10k maximum ratings: total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 150 mw collector current (using pnp as pass transistor) i c ( max ) 100 ma thermal resistance, junction to ambient air (note 3) r ja 833 c/w operating and storage junction temperature range t j , t stg -55 to +150 c sub-component device - pre-bi ased pnp transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage v in +5 to -10 v output current i c -100 ma notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be f ound on our website at http:/www.diodes.com/produ cts/lead_free/index.php. 3. device mounted on fr-4 pcb, 1 in ch x 0.85 inch x 0.062 inch; please see page 6 or as per diodes inc. suggested pad layout document ap02001 on our website at http://www.d iodes.com/datasheets/ap02001.pdf. schematic and pin configuration sot-563
ds30761 rev. 6 - 2 2 of 6 www.diodes.com DCX100NS ? diodes incorporated sub-component device - pre-bi ased npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -10 to +40 v output current i o 50 ma electrical characteristics: pre-biased pnp transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition input voltage v i ( off ) -0.3 ? ? v v cc = -5v, i o = -100ua v i ( on ) ? ? -3.0 v v o = -0.3v, i o = -20ma output voltage v o ( on ) ? 0.1 -0.3 v i o /i i = -10ma /-0.5ma input current i i ? ? -7.2 ma v i = -5v output current i o ( off ) ? ? -0.5 ua v cc = -50v, v i = 0v dc current gain g i 33 ? ? ? v o = -5v, i o = -5ma input resistor tolerance r1 -30 ? +30 % ? resistance ratio tolerance r2/r1 0.8 1 1.2 % ? gain-bandwidth product f t ? 250 ? mhz v ce = -10v, i e = -5ma, f = 100 mhz electrical characteristics: pre-biased npn transistor @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition input voltage v i ( off ) 0.5 1.18 ? v v cc = 5v, i o = 100ua v i ( on ) ? 1.85 3 v v o = 0.3v, i o = 10ma output voltage v o ( on ) ? 0.1 0.3 v i o /i i = 10ma / 0.5ma input current i i ? ? 0.88 ma v i = 5v output current i o ( off ) ? ? 0.5 ua v cc = 50v, v i = 0v dc current gain g i 30 ? ? ? v o = 5v, i o = 5ma input resistor tolerance r1 -30 ? +30 % ? resistor ratio tolerance r2/r1 0.8 1 1.2 ? ? gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 100 mhz typical characteristics @t a = 25c unless otherwise specified -50 050100150 250 200 150 50 100 0 t , ambient temperature ( c) fig. 1 power derating curve (total device) a p , p o we r dissi p a t i o n (mw) d
ds30761 rev. 6 - 2 3 of 6 www.diodes.com DCX100NS ? diodes incorporated characteristics curves of pnp tr ansistor (q1) @t a = 25c unless otherwise specified 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0.1 0.2 0 0 i, c o lle c t o r c u r r en t (a) c v fig. 2 typical collector current vs. collector-emitter voltage ce , collector emitter voltage (v) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 100 1 0.1 10 100 1,000 h, d c c u r r en t g ain fe i , collector current (ma) fig. 3 typical dc current gain vs. collector current c 0 50 150 200 250 300 v = 5v ce t = 85c a t = 125c a t = 150c a v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 4 typical collector-emitter saturation voltage vs. collector current c 0.01 0.1 1 10 100 0.1 1 10 100 1,000 i/i=10 cb t = 25c a t = -55c a t = 85c a t = 125 c a t = 150 c a 0.01 0.1 0.1 10 100 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 5 typical collector-emitter saturation voltage vs. collector current c 1 i/i=20 cb t =150c a t =125c a t = 85c a t = 25c a t =-55c a 0 0.1 10 11 0 0 i , collector current (ma) fig. 6 typical input voltage vs. collector current c in p u t v o l t a g e (v) 3 6 9 12 15 v = 0.3v ce t =-55c a 10 i , collector current (ma) c fig. 7 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.1
ds30761 rev. 6 - 2 4 of 6 www.diodes.com DCX100NS ? diodes incorporated 15 i , collector current (ma) c fig. 8 typical base-emitter saturation voltage vs. collector current 0 3 6 12 1 10 i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current 2 3 4 6 7 8 characteristics curves of np n transistor (q2) @t a = 25c unless otherwise specified v , collector-emitter voltage (v) fig. 10 typical collector current vs. collector-emitter voltage ce i , c o l l e c t o r c u r r e n t ( a ) c 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 0.4 0.8 1.2 1.6 2 10 i , collector current (ma) c fig. 11 typical dc current gain vs. collector current 0 0.1 50 100 150 200 250 300 v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 12 typical collector-emitter saturation voltage vs. collector current c 0.01 0.1 1 10 100 0.1 1 10 100 1,000 i/i=20 cb t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 13 typical collector-emitter saturation voltage vs. collector current c 0.01 0.1 1 10 100 0.1 1 10 100 1,000
ds30761 rev. 6 - 2 5 of 6 www.diodes.com DCX100NS ? diodes incorporated input voltage (v) i , collector current (ma) fig. 14 typical input voltage vs. output current c 0 0.1 110 100 5 10 15 20 25 v , base-emitter turn-on voltage (v) be(on) i , collector current (ma) fig. 15 typical base-emitter turn-on voltage vs. collector current c 0 0.1 11 0 100 5 10 15 20 25 v = 5v ce t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 16 typical base-emitter saturation voltage vs. collector current c 0 0.1 11 0 100 6 12 18 24 30 i/i=10 cb t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 17 typical base-emitter saturation voltage vs. collector current c 0 0.1 110 100 6 12 18 24 30 i/i = 20 cb t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a ordering information (note 4) device packaging shipping DCX100NS-7 sot-563 3000/tape & reel notes: 4. for packaging details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 2005 2006 2007 2008 2009 2010 2011 2012 code s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d c01 = product type marking code ym = date code marking y = year e.g., t = 2006 m = month e.g., 9 = september c01 ym
ds30761 rev. 6 - 2 6 of 6 www.diodes.com DCX100NS ? diodes incorporated package outline dimensions suggested pad layout sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
ds30761 rev. 6 - 2 7 of 6 www.diodes.com DCX100NS ? diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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